Compositions of materials for forming protective film in semiconductor device
US4497922A · kind A · utility
4Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 6, 1983 |
| Grant date | Feb 5, 1985 |
| Priority date | — |
| Expiry date | Jun 6, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A composition of materials comprising a polyamide acid-silicone intermediate obtained by reacting (a) a diaminoamide compound of the formula: ##STR1## wherein Ar and Y are as defined in the specification, (b) a diaminosiloxane, (c) a diamine, and (d) an aromatic tetracarboxylic acid dianhydride can form a protective film used in a semiconductor device excellent in adhesive properties, heat resistance and preventing soft errors due to .alpha.-rays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.