High-power III-V semiconductor device
US4498093A · kind A · utility
29Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 14, 1981 |
| Grant date | Feb 5, 1985 |
| Priority date | — |
| Expiry date | Sep 14, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
III-V semiconductor devices such as, e.g., MESFET, JFET, MOSFET, and IGFET devices are provided with relatively high-ohmic gates or wide gate finger widths as is desirable for maximum utilization of a semiconductor surface. For example, aluminum gate electrodes having a cross-sectional area of 1.2 square micrometer and a length of 300 micrometers or more are used. The resulting devices have unexpectedly high power handling capability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.