Integrated circuit formed on a semiconductor substrate with a variable capacitor circuit
US4499387A · kind A · utility
31Cited by
8References
23Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 3, 1982 |
| Grant date | Feb 12, 1985 |
| Priority date | — |
| Expiry date | Dec 3, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/00361
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A MOS type semiconductor integrated circuit comprising a C-MOS inverter including P- and N-channel MOS transistors connected in series between V.sub.DD and V.sub.SS power supply terminals, the gates of the MOS transistors being supplied with an input signal; a variable capacitor connected between a node at which the transistors are interconnected and a reference voltage; and a voltage generator for producing an output voltage to the variable capacitor, the voltage generator being capable of irreversibly changing the level of the output voltage, thereby changing a capacitance of the variable capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.