Silicon photodiode with n-type control layer
US4499483A · kind A · utility
5Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 26, 1984 |
| Grant date | Feb 12, 1985 |
| Priority date | — |
| Expiry date | Apr 26, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
A p-.nu.-n Si photodiode having an n-type control layer extended into the silicon body from a portion of the surface contiguous to that portion from which a p-type region extends. Photodiodes incorporating this control layer have a much higher junction resistance. The invention also includes an improved method of making a photodiode which has a reduced number of processing steps. The improvement comprises implanting As or Sb into the surface of a .nu.-type Si body to form an n-type layer prior to the steps of passivating the surface and forming a p-type region extending into the body from the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.