Photovoltaic device

US4500744A · kind A · utility

Assignee

• Tokyo Shibaura Denki Kabushiki Kaisha · JP

Inventors

• Hidetoshi Nozaki · Yokohama, JP
• Takaaki Kamimura · Tokyo, JP
• Tamothu Hatayama · Matsudo, JP
• Tadashi Utagawa · Tokyo, JP

Key dates

• Filing date: Jul 13, 1983
• Grant date: Feb 19, 1985
• Expiry date: Jul 13, 2003

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/548

Abstract

A photovoltaic device comprises a transparent substrate, an amorphous silicon layer structure of a p-i-n type formed on the substrate and comprised of a p-layer, i-layer and n-layer, and an electrode formed on the amorphous silicon layer structure, wherein either the p-layer and n-layer of the amorphous silicon layer structure, on which light is incident is constituted such that its optical forbidden band gap is greater on the i-layer side than on the substrate side.