Field effect transistor microwave amplifier
US4500848A · kind A · utility
18Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 20, 1982 |
| Grant date | Feb 19, 1985 |
| Priority date | — |
| Expiry date | Aug 20, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03G3/3036
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In a microwave preamplifier of a Doppler radar system used for Earth observation, three pre-matched and self-biassed field effect microwave transistors are provided. By supplying these transistors by means of a voltage regulator, whose output voltage varies under the action of a control circuit, the gain of this pre-amplifier may be varied without modifying the standing wave ratio, thereby obtaining modulation of the microwave signal amplified by the amplifier. Thus, additional modulation may be obtained, speech modulation for example, on the transmission signal of an Earth observation Doppler radar system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.