Emitter ballast resistor configuration
US4500900A · kind A · utility
8Cited by
2References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 22, 1982 |
| Grant date | Feb 19, 1985 |
| Priority date | — |
| Expiry date | Feb 22, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/177
Abstract
A power transistor having a collector region lying in one principal surface of a semiconductor body, a base region surrounded with the collector region and an emitter region surrounded with the base region, wherein the emitter region includes a main transistor operation portion, a ballast resistance portion and an electrode connection portion, and wherein the part of the base region surrounding the ballast resistance portion is narrower than the part of the base region surrounding the electrode connection portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.