Stacked semiconductor device with sloping sides
US4500905A · kind A · utility
225Cited by
3References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 28, 1982 |
| Grant date | Feb 19, 1985 |
| Priority date | — |
| Expiry date | Sep 28, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a stacked semiconductor device wherein a plurality of semiconductor layers integrated with semiconductor elements are stacked with an insulating layer interposed between two adjacent of said semiconductor layers. This semiconductor device has one or more inclined faces extending over two or more of said semiconductor layers. These inclined faces are formed thereon with an interconnection layer or semiconductor element for effecting the transmission and reception of signals between circuits, having said semiconductor elements, formed in the different semiconductor layers, through another insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.