Dielectrically isolated semiconductor devices
US4501060A · kind A · utility
87Cited by
11References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 24, 1983 |
| Grant date | Feb 26, 1985 |
| Priority date | — |
| Expiry date | Jan 24, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Dielectrically isolated single crystal silicon of high quality is produced by an extremely convenient process. This process involves the fusing of two silicon bodies where at least one of these bodies has a region of silicon oxide. The bodies are contacted so that the silicon oxide is at an interface between the two bodies. The bodies are then heated to an elevated temperature while applying a nominal electrical potential across the interface. This combination of applied potential and temperature permanently fuses the two bodies without producing any significant damage to the crystal quality of these bodies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.