FET Controlled thyristor

US4502070A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Ludwig Leipold · Munich, DE
• Jens-Peer Stengl · Hersbruck, DE
• Jeno Tihanyi · Tauberbischofsheim, DE

Key dates

• Filing date: Jun 22, 1981
• Grant date: Feb 26, 1985
• Expiry date: Jun 22, 2001

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D18/655

Abstract

Controlled semiconductor switch with a semiconductor body containing a thyristor structure having a first zone of first conductivity type embedded in coplanar relationship in a second zone of second conductivity type; also containing a third zone of the first conductivity type and a fourth zone of the second conductivity type; and further containing an MIS-FET integrated into the semiconductor body and having a source zone of the first conductivity type embedded in coplanar relationship in a zone of the second conductivity type; an insulating layer disposed on the surface of the semiconductor body, a control electrode lying on the insulating layer and covering a first channel zone operatively associated with the FET; and a cathode electrode on the semiconductor body, including the features that the zone of the second conductivity type of the MIS-FET is embedded in the third zone in coplanar relationship therewith and forms the first channel zone at the surface of the semiconductor body; the second zone of the thyristor structure is embedded in the third zone in coplanar relationship therewith and forms a second channel zone at the surface of the semiconductor body; the third zone e…