Process for forming fine patterns
US4502916A · kind A · utility
13Cited by
4References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 3, 1984 |
| Grant date | Mar 5, 1985 |
| Priority date | — |
| Expiry date | May 3, 2004 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/094
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Fine patterns are formed by a process wherein a workpiece is spin coated with a heat-resistant resin layer, this resin layer is spin coated with an organotitanium or titanium oxide layer, a resist pattern is formed on the organotitanium or titanium oxide layer, the organotitanium or titanium oxide layer is etched by ion etching with the resist pattern as a mask, and finally, the resin layer is etched by using the etched organotitanium or titanium oxide layer as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.