Semiconductor device with fuse
US4503315A · kind A · utility
15Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 27, 1982 |
| Grant date | Mar 5, 1985 |
| Priority date | — |
| Expiry date | Dec 27, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with a fuse including an insulating layer having at least one step. A fusible film on the insulating layer crosses the step and a covering film is formed on the fusible film, the step and the insulating layer. When the portion of the fusible film crossing the step is irradiated with a laser beam the portion of the fusible film on the upper surface of the insulating layer melts and flows onto the lower surface of the insulating layer without forming a hole, thereby separating the fusible film at the step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.