Ion beam processing apparatus and method of correcting mask defects
US4503329A · kind A · utility
77Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1982 |
| Grant date | Mar 5, 1985 |
| Priority date | — |
| Expiry date | Sep 29, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0807
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed is an ion beam processing apparatus comprising within a vacuum container a specimen chamber with a table for mounting a specimen provided therein, a high intensity ion source, such as a liquid metal ion source or an electric field ionizing ion source which operates in ultra-low temperature, confronting the specimen chamber, an extraction electrode for extracting an ion beam out of the ion source, a charged-particle optical system for focusing the ion beam to a spot, and an aperture for adjusting the spot diameter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.