Multi-dimensional quantum well device
US4503447A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 1982 |
| Grant date | Mar 5, 1985 |
| Priority date | — |
| Expiry date | Jul 16, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/084
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A superlattice semiconductor device consisting of a plurality of multi-dimensional charge carrier confinement regions of semiconductor material exhibiting relatively high charge carrier mobility and a low band gap which are laterally located in a single planar layer of semiconductor material exhibiting a relatively low charge carrier mobility and high band gap and wherein the confinement regions have sizes and mutual separation substantially equal to or less than the appropriate deBroglie wavelength. The device, in its preferred form, comprises a thin film of semiconductor material selected from group II-VI or III-V compounds or silicon wherein there is formed laterally located cylindrically shaped periodic regions which are adapted to act as quantum well confinement regions for electrons.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.