Magnetic bubble memory device
US4503517A · kind A · utility
3Cited by
1References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 19, 1983 |
| Grant date | Mar 5, 1985 |
| Priority date | — |
| Expiry date | Oct 19, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/34
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic bubble memory device comprises an ion-implanted region for information storage formed in a surface of a magnetic material layer and a permalloy transfer path formed near an ion implantation transfer path defined by the edge of the ion-implanted region for reading information from the ion implantation transfer path or writing information in the ion implantation transfer path. The ion implantation depth in a portion of the ion-implanted region near the permalloy transfer path is continuously changed to provide an inclined edge of the ion-implanted region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.