Semiconductor non-volatile memory element of an electrically erasable type
US4503519A · kind A · utility
27Cited by
4References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 19, 1982 |
| Grant date | Mar 5, 1985 |
| Priority date | — |
| Expiry date | Mar 19, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/686
Abstract
A semiconductor non-volatile memory element of an electrically erasable type includes a floating gate formed on a semiconductor substrate through a first insulating film, and an erase-only or a write/erase gate formed through a second insulating film on the floating gate. The second insulating film is an oxidized film formed by thermal oxidation of polycrystalline silicon having a thickness in the range between 150 and 400 angstroms. Due to such a thin insulating film, the amount of electrons trapped in the second insulating film is greatly decreased so that erasure is possible a greater number of times.
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