Semiconductor laser
US4503539A · kind A · utility
8Cited by
1References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 13, 1984 |
| Grant date | Mar 5, 1985 |
| Priority date | — |
| Expiry date | Apr 13, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32308
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A new laser structure having self-aligned junction stripe geometry grown by the MO CVD process is disclosed. The laser is grown on a groove-etched substrate and has a DH structure with a small V-shaped active region. A current path in the V-shaped region is formed using anomalous zinc diffusion during growth, which allows a broad area metal contact for both sides of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.