Method of producing semiconductor device
US4505028A · kind A · utility
45Cited by
5References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 19, 1984 |
| Grant date | Mar 19, 1985 |
| Priority date | — |
| Expiry date | Jan 19, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/909
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon wafer having a tungsten and/or molybdenum film formed on its surface is heat-treated in hydrogen containing water vapor. Thus, silicon can be selectively oxidized without substantially oxidizing tungsten and/or molybdenum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.