Method of fabricating a semiconductor device utilizing simultaneous outdiffusion and epitaxial deposition
US4505766A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | May 4, 1983 |
| Grant date | Mar 19, 1985 |
| Priority date | — |
| Expiry date | May 4, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/901
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a diffused layer of a first conductivity type which extends to a buried layer of a second conductivity type, formed in a manner to extend from a part of a surface of a semiconductor layer of the second conductivity type which is epitaxially grown on a semiconductor substrate of the first conductivity type through the buried layer of the second conductivity type. A semiconductor junction capacitance is formed of the diffused layer of the first conductivity type and the buried layer of the second conductivity type, and the concentration of an impurity to be introduced into the buried layer of the second conductivity type is controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.