Semiconductor laser device
US4506366A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1982 |
| Grant date | Mar 19, 1985 |
| Priority date | — |
| Expiry date | Jun 29, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4043
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device including at least a laminated region of first, second, third and fourth semiconductor layers on a predetermined semiconductor substrate, wherein the third semiconductor layer has a refractive index smaller than that of the second semiconductor layer; the first and fourth semiconductor layers have a refractive index smaller than that of the second and third semiconductor layers and have a conductivity type opposite that of the second and third semiconductor layers; the forbidden band gap of the first and third semiconductor layers is greater than that of the second semiconductor layer; and at least the second and third semiconductor layers are bent so that the laser light generated inside the second semiconductor layer in the proximity of the laser light-emitting facets generates optical coupling in the third semiconductor layer and is emitted from the crystal facets of the third semiconductor layer. The device of the present invention is effective for increasing the output of semiconductor laser devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.