Control of substrate injection in lateral bipolar transistors
US4507848A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 22, 1982 |
| Grant date | Apr 2, 1985 |
| Priority date | — |
| Expiry date | Nov 22, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor structure which reduces substrate current injection from lateral bipolar transistors. A buried layer of a first conductivity type is formed in a semiconductor substrate of opposite conductivity. An epitaxial layer of the first conductivity type is formed such that at least a portion of the epitaxial layer overlies the buried layer. Isolation oxide regions are formed in a epitaxial layer. The isolation oxide regions extend to the substrate to define an island of electrically isolated epitaxial material. A selected impurity of the first conductivity type is introduced into that portion of the epitaxial layer beneath the to-be-formed lateral transistor. The lateral transistor is formed in the epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.