Polymethyl methacrylate compatible silicon dioxide complexing agent
US4508591A · kind A · utility
18Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 8, 1984 |
| Grant date | Apr 2, 1985 |
| Priority date | — |
| Expiry date | Mar 8, 2004 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/948
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
An etching solution for the dissolution of silicon dioxide through a portable conformable mask, with PMMA as the etch stop layer, has been developed which eliminates resist lifting and non-uniform lateral etching, thereby providing the improved oxide edge definitions required for 1 micron line geometries in VLSI chips.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.