Two-pole overcurrent protection device
US4509089A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 23, 1983 |
| Grant date | Apr 2, 1985 |
| Priority date | — |
| Expiry date | May 23, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/101
Abstract
A two-pole overcurrent protection device comprises an integrated circuit with a thyristor having an emitter layer and base layer which, on the cathode side, is connected to the emitter layer on the cathode side by means of a normally non-conducting MOS transistor. The on-state voltage across the thyristor is supplied to the control electrode of the transistor via a Schottky diode, whereby, at a certain thyristor current, the thyristor is made conducting and short-circuits the cathode-emitter junction. The edge of the Schottky diode is arranged adjacent to the cathode base layer and at such a distance therefrom that the barrier layer at the center junction of the thyristor penetrates into the diode and limits the voltage on the control means of the MOS transistor to a harmless value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.