Organometallic chemical vapor deposition of films utilizing organic heterocyclic compounds
US4509997A · kind A · utility
21Cited by
8References
8Claims
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Key dates
| Filing date | Oct 18, 1983 |
| Grant date | Apr 9, 1985 |
| Priority date | — |
| Expiry date | Oct 18, 2003 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/407
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a method of producing inorganic thin films by metal inorganic chemical vapor deposition. The method comprises forming a vapor stream comprising a vapor mixture of an organometallic compound and a heterocyclic organic compound incorporating a group V or group VI element, and thermally decomposing the mixture on a heated substrate to form an inorganic layer. The heterocyclic compound may be an aliphatic or aromatic ring compound. The mixture may include vapors appropriate for deposition of ternary or higher order compounds, and/or for introducing dopants.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.