Method of fabricating submicron silicon structures such as permeable base transistors
US4510016A · kind A · utility
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Key dates
| Filing date | Dec 9, 1982 |
| Grant date | Apr 9, 1985 |
| Priority date | — |
| Expiry date | Dec 9, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/911
Abstract
Submicron silicon structures are fabricated by repeat oxidation and stripping the walls of a U-groove leaving thin silicon fingers. This method may be used to fabricate a silicon transistor having an emitter and a collector separated by a channel. The channel is formed in a silicon finger by a Schottky base, which at zero bias pinches off conduction of the channel. A bias voltage on the Schottky base causes conduction. The channel has a very short length making the transistor capable of high frequency operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.