Electrophotographic photoreceptors having amorphous silicon photoconductors
US4510224A · kind A · utility
34Cited by
2References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 3, 1983 |
| Grant date | Apr 9, 1985 |
| Priority date | — |
| Expiry date | May 3, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoreceptor comprising a photoconductive layer composed of hydrogenated and/or fluorinated amorphous silicon, a surface modifying layer formed on the above photoconductive layer and composed of hydrogenated and/or fluorinated amorphous silicon carbide and a charge transport layer formed below the above photoconductive layer and composed of hydrogenated and/or fluorinated amorphous silicon carbide wherein the thickness "t" of the above surface modifying layer is selected in a range 400 .ANG..ltoreq.t<2,000 .ANG..
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.