Ion micro-analysis
US4510387A · kind A · utility
8Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 20, 1982 |
| Grant date | Apr 9, 1985 |
| Priority date | — |
| Expiry date | Oct 20, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/252
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In ion micro-analysis, intensity of at least one species of secondary ions is monitored, and a reference etching time required for etching an implanted depth of primary ions is determined from a profile of a secondary ion intensity signal. Analysis time is graduated on the basis of the reference etching time to represent an analysis signal with the scale of the depth. The primary ions are non-volatile and may be active ions which react with a specimen or metal ions. The analyzed depth can be found during the analysis to prevent unwanted analysis and assure rapid data processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.