Method of fabricating a lateral PNP transistor

US4510676A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Narasipur G. Anantha · Hopewell Junction, US
• Santosh P. Gaur · Wappingers Falls, US
• Yi-Shiou Huang · Poughkeepsie, US
• Paul J. Tsang · Poughkeepsie, US

Key dates

• Filing date: Dec 6, 1983
• Grant date: Apr 16, 1985
• Expiry date: Dec 6, 2003

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A method for making a lateral PNP transistor simultaneously with an NPN transistor and the resultant device wherein a first mask defines a base-width by the resistor implant for a P-type resistor and a second mask is overlaid asymmetrically on said first mask to partially cover the collector. At the same time that the NPN extrinsic base contact is made, P-type dopants are introduced in the areas exposed by the first and second masks to provide an emitter and a collector contact for the PNP transistor.