Surface acoustic wave device using an elastic substrate and an aluminum nitride piezoelectric film
US4511816A · kind A · utility
27Cited by
3References
45Claims
0Family size
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Key dates
| Filing date | Mar 9, 1983 |
| Grant date | Apr 16, 1985 |
| Priority date | — |
| Expiry date | Mar 9, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/02574
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A surface acoustic wave device comprises an elastic substrate having a major surface with a given crystal orientation and having a positive temperature coefficient of delay (TCD), and AlN film deposited on the elastic substrate so that piezoelectric axis of the AlN film has a predetermined direction with respect to the major surface of the elastic substrate having a negative TCD, and electrodes provided on the AlN film or between the elastic substrate and the AlN film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.