Semiconductor element

US4511912A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventor

• Peter Mahrla · Zorneding, DE

Key dates

• Filing date: Aug 5, 1981
• Grant date: Apr 16, 1985
• Expiry date: Aug 5, 2001

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/133

Abstract

Semiconductor element, including at least one bi-polar power transistor having parallel-connected transistor regions, active and contacted partial base zone regions, an emitter zone-base zone pn-junction, and base barrier resistances disposed between the active base regions at the emitter-base pn-junction and the contacted base regions, the greater part of the base current being conducted through the base barrier resistances and the voltage drop over the emitter region being small compared to the voltage between the active base region and the contacted base region.