Low resistance indium oxide films
US4512864A · kind A · utility
5Cited by
4References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 30, 1983 |
| Grant date | Apr 23, 1985 |
| Priority date | — |
| Expiry date | Nov 30, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12597
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for depositing an indium oxide film by magnetron sputtering is disclosed wherein the resistance of the film is lowered by maintaining the substrate at an elevated temperature during the magnetron sputtering process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.