Process for amorphous silicon films
US4513022A · kind A · utility
16Cited by
0References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 25, 1984 |
| Grant date | Apr 23, 1985 |
| Priority date | — |
| Expiry date | May 25, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
This invention is directed to a process for preparing semiconducting and photoelectronic devices comprised of a first electrode means, a second counter electrode means, a receptacle means for the first electrode means and the second counter electrode means, a substrate means to be coated contained on the first electrode means, which substrate is in the form of a cylindrical member, and a gas inlet means, a gas exhaust means, wherein a silane gas is introduced into the receptacle in a crossflow direction, perpendicular to the axis of the cylindrical member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.