Arrangement for damping the resonance in a laser diode
US4513423A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 1982 |
| Grant date | Apr 23, 1985 |
| Priority date | — |
| Expiry date | Jun 4, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2275
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An arrangement for damping the resonance in a laser diode includes an additional layer (25) which together with the conventional laser diode form a structure (35) of a bipolar transistor. Therein, the additional layer serves as the collector, the cladding layer (12) next to it as the base, and the active region (11) and the other cladding layer (13) as the emitter. A capacitor (30) is connected across the base and the collector. It is chosen so that at any frequency above a certain selected frequency (f.sub.c) which is far below the resonance frequency (f.sub.res) the capacitor impedance is very low, effectively shorting the base to the collector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.