Particulate silicon photovoltaic device and method of making
US4514580A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 2, 1983 |
| Grant date | Apr 30, 1985 |
| Priority date | — |
| Expiry date | Dec 2, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
An inexpensive photovoltaic device made using particulate silicon is described. Silicon particles of a particular type having a size range of from 300 to 1000 micrometers are sintered to a metallic substrate to form an ohmic contact therebetween. The particles and the substrate are provided with an insulating layer except for the top surfaces of the silicon particles, to which a layer of the opposite type is applied to form p-n junctions in the particles. A second electrode is then applied either directly or, preferably, via a first application of a transparent conductive coating. The device is then, preferably, covered with a light transparent member to provide a hermetic seal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.