X-Ray lithographic system
US4514857A · kind A · utility
9Cited by
1References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 13, 1983 |
| Grant date | Apr 30, 1985 |
| Priority date | — |
| Expiry date | Oct 13, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
While a convex mirror is being rotated or rotatingly vibrated about a rotational axis which is parallel to the center axis of the convex mirror and which is eccentric to the convex mirror, a synchrotron radiation flux is caused to be incident on the convex mirror, and a radiation sensitive resist film is irradiated with the reflected radiation flux through a mask. Thus, an area of uniform irradiation can be increased remarkably as compared with that in a prior art, and the invention is well suited to the irradiation of a semiconductor wafer having a large area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.