Apparatus for producing a silicon single crystal from a silicon melt
US4515755A · kind A · utility
7Cited by
7References
11Claims
0Family size
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Inventors
Key dates
| Filing date | Apr 14, 1982 |
| Grant date | May 7, 1985 |
| Priority date | — |
| Expiry date | Apr 14, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1032
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for producing silicon single crystal from melted silicon by the pull-up process using a seed crystal, wherein at least a portion of a device in contact with the melted silicon includes a layer of silicon nitride precipitated from gaseous phase and comprising 20% or above of .beta. phase, or comprising 80% or above of .alpha. phase whose crystal grains have grain diameters of 5 .mu.m or above at a ratio of 10% or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.