X-Ray lithography mask and method for fabricating the same
US4515876A · kind A · utility
21Cited by
6References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 15, 1983 |
| Grant date | May 7, 1985 |
| Priority date | — |
| Expiry date | Jul 15, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/167
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An X-ray absorber layer in the form of single layer of high melting point metal such as Ta, W is formed with granular crystal grains on a mask substrate, so that an internal stress of the layer is reduced. A fine pattern is formed from the absorber layer by reactive sputter etching using CBrF.sub.3 gas as an etchant, so that an X-ray absorber pattern is formed on the mask substrate. The X-ray lithography mask thus fabricated has a fine pattern such as submicron pattern with a high degree of pattern contrast and a high dimensional accuracy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.