Multi-layer acoustic surface wave device having minimal delay time temperature coefficient
US4516049A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Sep 28, 1983 |
| Grant date | May 7, 1985 |
| Priority date | — |
| Expiry date | Sep 28, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/02574
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An acoustic surface wave device includes a substrate made of an elastic material, a multilayer structure disposed on a surface of the substrate and having a silicon dioxide layer and an aluminum nitride layer superimposed on each other, and electrodes having predetermined configurations formed on the multilayer structure. The main component of the elastic material is a silicon monocrystal, whose temperature coefficient of delay time for acoustic surface waves is positive, and the piezo-electric axis of the aluminum nitride is either perpendicular or parallel to the surface of the substrate, with a negative delay coefficient, counteracting that of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.