Columnated and trimmed magnetically sensitive semiconductor
US4516144A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 1982 |
| Grant date | May 7, 1985 |
| Priority date | — |
| Expiry date | Sep 23, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/101
Abstract
A Hall effect semiconductor device is provided with means for clipping or focusing emitted carriers to form a centralized columnated beam, and trimming means for accurately controlling the amount of magnetic deflection due to Lorentz force. Emitters from an emitter region travel through a base region under influence of an externally applied drift field toward a pair of spaced collector regions. The polarity of a perpendicularly applied magnetic field determines deflection of the carriers toward one or the other of the collector regions. The columnating means comprises a pair of spaced auxiliary collector regions intermediate the emitter region and the primary collector regions for collecting carriers not within a central angle or cone. A columnated beam is provided by carriers passing between the auxiliary collectors within the central angle or cone. Trimming of the beam is provided by a selectable electric field applied in the same direction as deflection of the carriers to thus control the amount of beam deflection and insure that the beam is directed toward the one or other primary collector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.