Semiconductor integrated circuit including a fuse element
US4517583A · kind A · utility
38Cited by
6References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 4, 1984 |
| Grant date | May 14, 1985 |
| Priority date | — |
| Expiry date | Oct 4, 2004 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit includes a transistor element, an insulating layer formed adjacent to the transistor, and a wiring connected to the transistor element at one end thereof and having a fuse as a part thereof. The wiring is made of monocrystalline silicon and formed on the insulating layer providing a substantially constant burn out current value for the fuse, and thus highly reliable operation of the circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.