Optical guided wave devices employing semiconductor-insulator structures
US4518219A · kind A · utility
43Cited by
4References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 3, 1983 |
| Grant date | May 21, 1985 |
| Priority date | — |
| Expiry date | Feb 3, 2003 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/131
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A three-dimensional optical waveguide is disclosed. This waveguide comprises a single crystal semiconductor layer grown upon an insulator which has an index of refraction lower than the semiconductor. The semiconductor layer has a thickness which provides confinement of light propagating in the semiconductor layer in the vertical direction. An effective larger index of refraction over a cross-sectional region of the semiconductor layer provides confinement of light in the lateral direction. This lateral confinement is achieved by side walls in the semiconductor layer which extend toward, but fall short of, the insulator layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.