Static induction transistor image sensor with noise reduction
US4518863A · kind A · utility
28Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 13, 1982 |
| Grant date | May 21, 1985 |
| Priority date | — |
| Expiry date | Jul 13, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/68
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A SIT (Static Induction Transistor) image sensor with a high-sensitivity and a high-fidelity is disclosed. The image sensor comprises a SIT image cell array and a scanning circuit which scans in turn a plurality of SIT image cells in such a manner that respective scanning time in all the cells are equal throughout a sequential scanning operation for the SIT image sensor. A reading line and a refreshing line may be combined into a single line. A differential amplifier is provided for correcting a picture element information to remove a noise component therefrom.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.