Semiconductor device for the vacuum-emission of electrons
US4518980A · kind A · utility
2Cited by
6References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 1982 |
| Grant date | May 21, 1985 |
| Priority date | — |
| Expiry date | May 21, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/3423
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron emitting device including an active semiconductor layer having a surface from which electrons are emitted. The layer is doped with impurity atoms at a density which decreases with distance from the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.