Method for forming metallization structure having flat surface on semiconductor substrate
US4520041A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 1983 |
| Grant date | May 28, 1985 |
| Priority date | — |
| Expiry date | Nov 3, 2003 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metallization structure having a substantially flat surface can be formed on a semiconductor substrate by forming first and second insulating layers on the substrate. The second insulating layer is selectively removed to form grooves therein. Then, a metallic material layer is conformably formed. The metallic layer has grooves corresponding to the grooves of the second insulating layer. A flowable polymer is applied to the surface of the resultant structure to form a layer having a flat surface. The polymer layer and the metallic layer are sequentially ion-etched to expose the second insulating layer. Thus, the metallization structure constituted by the remaining metallic layer and the second insulating layer is formed to have a flat surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.