Method for forming and growing a single crystal of a semiconductor compound
US4521272A · kind A · utility
21Cited by
11References
1Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 13, 1982 |
| Grant date | Jun 4, 1985 |
| Priority date | — |
| Expiry date | Dec 13, 2002 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1092
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for growing single crystal semiconductor compounds by the gradient freeze technique includes the process of reducing radiant heat flow while enhancing axial heat flow in the region of a seed crystal so as to give rise to an inverted solid-liquid interface together with a desired temperature profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.