Method and apparatus for making layered amorphous semiconductor alloys using microwave energy
US4521447A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1983 |
| Grant date | Jun 4, 1985 |
| Priority date | — |
| Expiry date | Dec 23, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus and process utilizes microwave energy for depositing amorphous alloy materials in layered form onto a receiving surface. The process results in materials having unique properties suitable for many applications including photovoltaic applications. The process includes the steps of providing at least one source of microwave energy, providing at least two reaction gases, each gas containing at least one alloying element to be deposited onto the receiving surface, and selectively exciting the reaction gases with microwave energy to create excited species containing the alloying elements to be deposited for depositing the alloys in alternating layers onto the receiving surface. For depositing alternating layers of silicon and germanium alloys, the reactions gases can include silane (SiH.sub.4) or silicon tetrafluoride (SiF.sub.4), and germane (GeH.sub.4) or germanium tetrafluoride (GeF.sub.4). In accordance with one disclosed embodiment, the reaction gases are excited separately with the excited species therefrom being sequentially introduced to the receiving surface for layered deposition. In accordance with another disclosed embodiment, the reaction gases are premixed to …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.