Patent · US Expired

Method of making reference surface markings on semiconductor wafers by laser beam

US4522656A · kind A · utility

31Cited by

8References

5Claims

0Family size

Assignee

Wacker-Chemitronic Gesellschaft fur Elektronik Grundstoffe mbH · DE

Inventors

Franz Kuhn-Kuhnenfeld · Emmerting, DE
Josef Kramler · Altötting, DE
Hans Gerber · Burghausen, DE

Key dates

Filing date	Apr 26, 1984
Grant date	Jun 11, 1985
Priority date	—
Expiry date	Apr 26, 2004

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/94
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing contrast rich, permanent and slag-free characterizations, particularly on polished semiconductor disks is described, in which the surface for generating the surface pattern is partially melted by laser radiation. According to the invention, a surface segment corresponding to 1.5 to 6.5 times the surface area of the desired surface pattern is irradiated, and the semiconductor material is caused to melt and partially vaporize only in the center thereof.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.