El display device
US4523189A · kind A · utility
68Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 1982 |
| Grant date | Jun 11, 1985 |
| Priority date | — |
| Expiry date | May 21, 2002 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2300/0842
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A thin-film EL display device incorporates a MOS active matrix. Each of the MOS transistor arrays is additionally provided in parallel with a Zener diode for the purpose of protecting the device from a high voltage. This Zener diode has a breakdown voltage characteristic corresponding to a difference between a luminous voltage and a non-luminous voltage of an EL display element and clamps the voltage across the MOS transistor, in the "OFF" state, to a voltage less than or equal to non-recoverable breakdown voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.