Solid state image pickup device utilizing microcrystalline and amorphous silicon
US4523214A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 2, 1982 |
| Grant date | Jun 11, 1985 |
| Priority date | — |
| Expiry date | Jul 2, 2002 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/2235
Abstract
A solid state image pickup device comprising a semiconductor substrate provided with light detecting sections and a scanning circuit for sequentially selecting the signals detected by the light detecting sections, wherein each light detecting section contains a silicon layer in which microcrystalline silicon and amorphous silicon are uniformly distributed and the crystal structure varies substantially continuously throughout. The light detecting section may further contain a hydrogenated amorphous silicon layer containing 6 to 37 atomic % of nitrogen, which is positioned on the silicon layer defined above. The light detecting section is connected with electrodes, one of which is transparent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.