Process for fabricating a bipolar transistor with a thin base and an abrupt base-collector junction
US4523370A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 1983 |
| Grant date | Jun 18, 1985 |
| Priority date | — |
| Expiry date | Dec 5, 2003 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/092
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for fabricating a bipolar transistor with a thin base and an abrupt base-collector junction includes the steps of depositing a thin layer of polycrystalline or amorphous silicon base material in a single crystal collector region, while in-situ doping the deposited silicon with boron atoms, and thereafter, recrystallizing the deposited silicon layer by thermal-pulse annealing at a temperature high enough to effect recrystallization and solid phase epitaxial regrowth while low enough to minimize interdiffusion of dopants between the base and collector. The process further includes providing the transistor fabricated by the aforedescribed steps with an abrupt base-emitter junction. This is accomplished by depositing n.sup.++ doped polysilicon with a LPCVD process and thereafter thermal annealing the polysilicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.